Table 4 Comparison of minimum SS, average SS, ION, Vth, IGIDL for SM and DM NC SOI FET.

From: Engineering the ferroelectric polarization to optimize the GIDL and negative output conductance in negative capacitance FET

LɸM1:LɸM2

SSmin. (mV/decade) at VDS = 0.9 V

SSaverage. (mV/decade) at VDS = 0.9 V

Vth (V) at VDS = 0.9 V

ION (mA) at VDS = 0.9 V

IGIDL (nA) at VDS = 0.9 V

VGS = − 0.3 V

IGIDL (nA) at VDS = 0.9 V

VGS = 0 V

SM

58.79

79.13

0.548

0.674

9.51

5.26

1:1

33.45

75.49

0.672

0.818

7.52

3.18

1:2

67.50

125.87

0.574

0.824

7.06

3.44

2:1

44.45

73.25

0.65

0.868

8.812

5.199