Table 5 Comparison of the proposed NC SOI FET with the literature.
Device type | Methodology | L (nm) | TFE (nm) | ION (mA/µm) | ION/IOFF | NOC optimized/mitigated | GILD effect |
|---|---|---|---|---|---|---|---|
NC SOI FET12 | Pr = 6 µC/cm2 & Ec = 3 MV/cm | 20 | 4 | ~ 0.8 | ~ 106 | Yes | Not analyzed |
NC SOI FET22 | FE layer at BOX &gate oxide | 20 | 3 | 1.18 | ~ 105 | Yes | Not analyzed |
NC SOI FET22 | FE layer at gate oxide | 20 | 3 | 1.05 | ~ 107 | No | Not analyzed |
NC SOI FET19 | With TFE variation | 20 | 7 | ~ 2.5 | ~ 106 | No | Not analyzed |
NC SOI FET19 | With TFE variation | 20 | 1.7 | ~ 1 | ~ 105 | Yes | Not analyzed |
NC SOI FET (SM) | This work | 22 | 7 | 0.674 | ~ 106 | No | Analyzed |
NC SOI FET (LɸM1:LɸM2 of 1:1) | This work | 22 | 7 | 0.818 | ~ 106 | Yes (optimized) | Analyzed & optimized |
NC SOI FET (LɸM1:LɸM2 of 1:2) | This work | 22 | 7 | 0.824 | ~ 106 | Yes (mitigated) | Analyzed & optimized |
