Fig. 6

provides detailed characteristics of the fabricated vdW (rGO/P2AMB S-nanocomposite) thin film optoelectronic device under different photon energies. Specifically, panel (a) illustrates the photo-responsivity, R, while panel (b) demonstrates the detectivity, D. The photon energies assessed range from 3.6 eV to 1.6 eV.