Fig. 1
From: Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing
Widefield micrograph of Sample #1 showing: untreated region of the sample (pristine), the 1 MeV He2+ irradiated region at a F = 1·1015 cm− 2 (irradiated), the portions of the irradiated regions that underwent pulsed-laser processing (Laser treated) with relevant processing parameters indicated for each region.
