Table 1 VSi− PL intensity values for different thermal processes (no thermal processing, 450 °C thermal annealing, 600 °C thermal annealing) for the laser untreated region and the two laser processed regions providing the largest PL signal for the two laser annealing (LA) wavelengths (532 nm, 624 mJ cm− 2, 800 pulses and 355 nm, 2180 mJ cm− 2, 600 pulses).
From: Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing
Integrated PL intensity | |||
|---|---|---|---|
No thermal treatment | 450° C, 30 min | 600 °C, 30 min | |
No LA | 450 | 750 | 850 |
LA 532 nm, 624 mJ cm− 2, 800 pulses | 600 | 1300 | 850 |
LA 355 nm, 2180 mJ cm− 2, 600 pulses | 850 | 1150 | 850 |
