Table 1 The values of cell parameters from XRD, crystallite size, strain for ZnO:Er deposited on sapphire and silicon substrate.

From: Sapphire/silicon-substrate dependent magnetism of Er-substituted ZnO (ZnO: Er) thin film: x-ray absorption near edge structure (XANES) study

Sample specification

Cell parameters (Å)

c/a

Unit cell volume (Å3)

Crystallite size (t= 0.89λ/ βcosθ) (nm)

Strain (ε=βcosθ/4sinθ)

ZnO:Er on sapphire substrate

a = 3.271 ±0.0002

c = 5.132 ±0.0002

1.56

47.57±0.006

105 nm

1.06 × 10−3

ZnO:Er on silicon substrate

a = 3.270 ±0.001

c = 5.239 ±0.0004

1.60

48.55±0.005

93 nm

5.4 × 10−4