Table 1 Comparison of the proposed Ghmsiw attenuator with the previously reported tunable attenuators.

From: Amplitude and phase control in SIW structures by tuning multilayered graphene

Ref.

Size mm2

Freq Band (GHz)

ΔIL (dB)

Min IL (dB)

Technology

7

0.91λ × 0.45λ

0–5

14

0.3

Microstrip+

FLG*

16

2.5λ × 0.83λ

7-14.5

13

2.5

SIW + Monolayer graphene (GSS)

26

5.14λ × 1.28λ

7.7–19

12

3

HMSIW + Monolayer graphene (GSS*)

27

3.04λ × 1.40λ

1–7

6

1

HMSIW*+π N/W* resistor

28

1.33λ × 0.53λ

6–10

6

2.5

HMSIW + PIN diode

This work

1.51λ × 0.58λ

5.5–8.5

13

5.45

HMSIW + FLG

  1. N/W*=Network, FLG*=Few layers graphene, GSS*=Graphene sandwiched structure, HSMIW = Half mode substrate integrated waveguide.
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