Table 2 Comparison of the proposed phase with the other technologies phase shifters.
From: Amplitude and phase control in SIW structures by tuning multilayered graphene
Ref. | Size mm2 | Freq Band (GHz) | Δ|S21| (dB) | Phase (deg) | FOM* (deg/dB) | Technology | |
|---|---|---|---|---|---|---|---|
- | 4-4.5 | 2 | 23 | 54.7 | IDC + Graphene | ||
1.33λ × 0.6λ | 4.4–6.2 | 1.5 | 60 | - | SIW + PIN diode | ||
5.2λ × 3.3λ | 6–12 | 2.3 | 180 | - | SIW + LM | ||
1.17λ × 0.22λ | 9.7–10.2 | 3.3 | 97 | 29 | BST* thin film | ||
3λ × 1λ | 8–14 | 1.2 | 41–180 | 163 | HMSIW + LM | ||
- | 8–12 | 1.53 | 60 | 12 | Microstrip + Graphene | ||
- | 4–6 | 1 | 59 | - | Microstrip + Graphene | ||
This work | 1.73λ × 0.67λ | 6.5–9.5 | 2.25 | 45 | 20 | HMSIW + Graphene | |
