Fig. 3 | Scientific Reports

Fig. 3

From: A temperature-induced hysteretic behavior of resistivity and magnetoresistance of electrodeposited bismuth microbridges for X-ray transition-edge sensor absorbers

Fig. 3

(a) Magnetoresistance (\(\:MR\left(B,\varTheta\:\right)\)) of a Hi-Res Si w = 20 mm pristine sample measured at various temperatures (\(\:\varTheta\:\)) both during cooldown (triangles) and warmup (circles). Data for each of the three phases of the resistivity in temperature curve are present: 300 K—metallic, 180 K and 80 K—semiconductive, 13 K—plateau. (b) Hysteresis in the magnetoresistance (\(\:{\Delta\:}MR\left(B,\varTheta\:\right)\)) with respect to the direction of the magnetic field (B) sweep—from − 0.77 T to 0.77 T and vice versa. The scattering of the data at 300 K is reflective of the limited resolution on the resistance measurements and not a physical effect.

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