Fig. 8
From: Dual-directional CIM-based non-volatile SRAM for instant-on/off energy-constrained edge AI devices

Layout of the proposed NVSRAM (a) 4 Kb array (b) cell.
From: Dual-directional CIM-based non-volatile SRAM for instant-on/off energy-constrained edge AI devices

Layout of the proposed NVSRAM (a) 4 Kb array (b) cell.