Table 2 The key parameters of I-MTJ and FinFET technologies.
From: Dual-directional CIM-based non-volatile SRAM for instant-on/off energy-constrained edge AI devices
Parameter | Value |
|---|---|
I-MTJ | |
Free layer thickness (TF) | 1.4 nm |
The thickness of the MgO barrier layer (Tb) | 1.2 nm |
The elliptical surface of the free layer (S) | 110 × 60×\(\frac{\pi }{4}\)nm2 |
Dimensions of the metal strip (l, w, d) | 120 × 70 × 1.8 nm3 |
MTJ Resistance-Area product (RAP) | 10 Ω µm2 |
Tunnel magnetoresistance (TMR) | 500% |
Parallel (P) resistance (LRS) | 1.98 kΩ |
Potential barrier height of MgO oxide (φ) | 0.4 V |
The saturation magnetization (Ms) | 10.8 × 105 A m-1 |
Anisotropy field (Hk) | 3.17 × 104 A m-1 |
Spin-hall angle (η) | 0.3 |
Thermal stability | 37.96 |
Retention time | ~ One year |
FinFET 7nm | |
Fin thickness (Tfin) | 6.5 nm |
Fin height (Hfin) | 34 nm |
Fin pitch (Pfin) | 27 nm |
Gate length (L) | 21 nm |
Oxide thickness (Tox) | 2.1 nm |
Equivalent oxide thickness (EOT) | 1 nm |
