Table 2 The extraordinary sensitivity dynamics of the innovatively engineered Bi2O3/Ppy thin-film optoelectronic device, compared to prior studies, showcasing its unparalleled superiority and advanced championship qualities.
Optoelectronic device | Wavelength (nm) | Potential (V) | R (mAW−1) |
|---|---|---|---|
Bi2O36 | 365 | 1 | - |
Ppy/CuO28 | 340 | 2 | 0.05 |
TiO2-PANI10 | 320 | 0 | 3 × 10−3 |
ZnO /RGO29 | 350 | 5 | 1.3 × 10−3 |
PBBTPD: Tri-PC61BM11 | 350 | 5 | 10−4 |
Ppy/NiOX30 | 340 | 2 | 0.07 |
ITO/CsPbBr3:ZnO/Ag26 | 405 | 0 | 0.01 |
ZnO/Cu2O31 | 350 | 2 | 4 × 10−3 |
Graphene/GaN32 | 365 | 7 | 3 × 10−3 |
GO/Cu2O13 | 300 | 2 | 0.5 × 10−3 |
PC71BM27 | 300 | 2 | 0.005 |
CuO nanowires33 | 390 | 5 | - |
TiN/TiO234 | 550 | 5 | - |
P3HT35 | 325 | 1 | NA |
CuO/Si Nanowire36 | 405 | 0.2 | 3.8 × 10−3 |
PbI2-5%Ag8 | 532 | 6 | NA |
Carbon-Co3O435 | 350 | 2 | 0.01 |
Se/TiO238 | 450 | 1 | 5 × 10−3 |
ZnO-CuO39 | 405 | 1 | 3 × 10−3 |
Bi2O3/Ppy (this work) | 340 | 2 | 1.0 |
