Table 1 Simulation parameters of the PTM.

From: In-pixel foreground and contrast enhancement circuits with customizable mapping

Parameter

Definition

Value

LPTM

Length towards current flow

5 nm

APTM

Cross-sectional area

27.5\(\:\times\:\)27.5 nm2

IC−HLT

Critical current for HLT

7.4 \(\:\mu\:\)A

IC−LHT

Critical current for LHT

100 \(\:\mu\:\)A

RHRS

Resistance in HRS

120.5 k\(\:{\Omega\:}\)

RLRS

Resistance in LRS

6.5 k\(\:{\Omega\:}\)