Fig. 1
(a) Schematic diagram of the Al/P3HT/TCP/FTO synaptic device; (b) The I-V characteristic curves of Al/P3HT/TCP/FTO memristors under illumination (600 µW/cm2) and dark conditions. The sequence of input voltages is: 0 V → 1.5 V → -1.5 V → 0 V; (c) Endurance test of synaptic device for 1000 cycles; (d) Retention time of Al/P3HT/TCP/FTO synaptic device; (e) Perform piecewise linear fitting on the dark-state I-V curves of the Al/P3HT/TCP/FTO synaptic device, and obtain the slope of each fitted line segment; (f) Perform piecewise linear fitting on the dark-state I-V curves of the Al/P3HT/TCP/FTO synaptic device under light conditions, and obtain the slope of each fitted line segment.
