Table 2 Properties of Si, InP, GaAs, \(\hbox {Al}_{0.3}\hbox {Ga}_{0.7}\)As, GaP and diamond utilized in COMSOL Multiphysics.

From: Theoretical investigation of parallel 63NiO/GaP heterojunction nuclear battery with graphene layer and its time-related performance

Symbol

Si

InP

GaAs

\(\hbox {Al}_{0.3}\hbox {Ga}_{0.7}\)As

GaP

Diamond

\(\varepsilon _\text {r}\)

11.7

12.5

12.9

12.05

11.1

5.7

\(E_\text {g}\)

1.12

1.344

1.424

1.798

2.26

5.5

\(\chi\)

4.05

4.38

4.07

3.74

3.8

0.35

\(N_\text {c}\)

\(2.8\times 10^{19}\)

\(5.7\times 10^{17}\)

\(4.7\times 10^{17}\)

\(6.52\times 10^{17}\)

\(1.8\times 10^{19}\)

\(1\times 10^{20}\)

\(N_\text {v}\)

\(1.04\times 10^{19}\)

\(1.1\times 10^{19}\)

\(9.5\times 10^{18}\)

\(1.12\times 10^{19}\)

\(1.9\times 10^{19}\)

\(1\times 10^{19}\)

\(\mu _\text {a}\) (\(\hbox {cm}^2\cdot \hbox {V}^{-1}\cdot \hbox {s}^{-1}\))

130

10

20

5

10

0

\(\mu _\text {b}\) (\(\hbox {cm}^2\cdot \hbox {V}^{-1}\cdot \hbox {s}^{-1}\))

500

170

491.5

240

147

2016

\(N_\text {ref}\) (\(\hbox {cm}^{-3}\))

\(8\times 10^{17}\)

\(4.87\times 10^{17}\)

\(1.48\times 10^{17}\)

\(1\times 10^{17}\)

\(1\times 10^{18}\)

\(3.25\times 10^{17}\)

d

1.25

0.62

0.38

0.324

0.85

0.73

\(\tau _0\) (s)

\(4\times 10^{-4}\)

\(8.5\times 10^{-8}\)

\(2\times 10^{-8}\)

\(3.15\times 10^{-8}\)

\(1\times 10^{-6}\)

\(2\times 10^{-6}\)

\(N_\text {R}\) (\(\hbox {cm}^{-3}\))

\(7.1\times 10^{15}\)

\(9.4\times 10^{17}\)

\(2\times 10^{18}\)

\(2\times 10^{18}\)

\(3.1\times 10^{14}\)

\(1\times 10^{15}\)