Table 1 Structural description of the proposed Dl-FG-ME-TFET.
S. no. | Parameter | Specifications |
|---|---|---|
1 | Gate length (\(L_G\)) | 20 nm |
2 | S/D length 2 | 18 nm |
3 | Floating gate length | 2 nm |
4 | InGaAs and silicon thickness | 8 nm |
5 | \(HfO_2\) thickness | 2 nm |
6 | Source work-function | 5.9 eV |
7 | Drain work-function | 3.9 eV |
8 | Gate work-function | 4.9 eV |
9 | Floating gates work-function | 3.4 eV |
