Table 2 Comparison table of the state-of-the-art LIF works.

²

GaSb/Si V-DGTFET

50 nm

0.748 aJ

Yes

OC

0.2

534 GHz

⁹

SOI-MOSFET

32 nm

35 pJ

Yes

OC

2.8

1 MHz

¹²

JL-FET

20 nm

1.4 pJ

Yes

OC

0.4

1 MHz

¹³

\(In_{0.95}Ga_{0.05}As\) MOSFET

1000 nm

7.1 pJ

No

OC

1.06

0.26 MHz

¹⁶

Si nipin diode

10 nm

0.02 fJ

Yes

\({-}{-}\)

0.6

1 MHz

¹⁷

Biristor neuron

20 nm

5.6 pJ

No

\({-}{-}\)

2.5

1.5 kHz

²⁸

MOSFET

800 nm

45 pJ

No

OC

3

400 Hz

³¹

SiGe TFET

50 nm

210 fJ

No

TF

0.9

50 Hz

⁴¹

SB-MOSFET

180 nm

4 pJ

No

OC

4.5

50 Hz

⁴²

SiGe MOSFET

400 nm

3.8 pJ

No

OC

2.5

50 Hz

⁴³

Ge-MOSFET

800 nm

8 pJ

No

OC

1.8

70 Hz

⁴⁴

Positive feedback FET

1000 nm

8.83 pJ

Yes

TF

1.4

1 MHz

⁴⁵

BTBT Si neuron

40 nm

2.74 fJ

Yes

OC

0.2

150 kHz

⁴⁶

Si-TFET

50 nm

750 fJ

No

TF

1.2

MHz

This work

Dl-FG-ME-TFET

20 nm

144 aJ

No

TF

0.12

0.1 MHz