Table 1 Summary of performance parameters of WBG single-junction sub-cells with two different HTL as calculated in the SCAPS simulation.
Device architecture | Electron affinity χ (eV) | VOC (V) | JSC (mA cm−2) | FF (%) | PCE (%) |
|---|---|---|---|---|---|
ITO/Cu2O/FA0.8Cs0.2Pb(I0.6Br0.4)3 (\({E}_{g}\sim 1.77\,\text{eV}\))(350 nm)/C60/SnO2 /Au | 2.86 | 1.24 | 15.62 | 82.96 | 16.18 |
3.8 | 1.27 | 15.69 | 86.54 | 17.36 | |
ITO/Cu–O/FA0.8Cs0.2Pb(I0.6Br0.4)3 (\({E}_{g}\sim 1.77\,\text{eV}\))(350 nm)/C60/SnO2/Au | 2.84 | 0.88 | 15.78 | 75.72 | 10.59 |
3.8 | 1.27 | 15.86 | 86.68 | 17.57 |
