Fig. 2
From: Ultrabroadband THz conductivity of gated graphene in- and out-of-equilibrium
FTIR transmission ratio of the graphene monolayer gated on the electron-doped side to that at the charge-neutral point (CNP). Electron doping corresponds to (a) \(E_F =\) 130 meV, (b) \(E_F =\) 215 meV, and (c) \(E_F =\) 275 meV, while the CNP doping level is at \(E_F =\) 50 meV. Vertical lines in each panel indicate the inflection points at \(2E_F\). Data are obtained by binning the ratio of raw FTIR traces, and the error bars represent 1 standard deviation of the mean within each frequency bin. Inset: linear relationship between the source-drain current and the Fermi level. Data is shown as circles, alongside single-Drude (solid line) and two-component Drude model (dotted line) fits. The vertical dashed lines in each panel indicate \(2 E_F\) for each of the three doping levels.
