Table 1 Crystal Structure Parameters and Band Gaps of α- and β-Ge2Y2 Monolayers.
From: Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N)
Lattice(Å) a | Band length(Å) | Stacking type | Space group | Bandgap(eV) | ||
|---|---|---|---|---|---|---|
LGe-Ge | LGe-Y | |||||
α-Ge2As2 | 3.821 | 2.500 | 2.488 | AA | P6m2(No. 187) | 1.06(indirect)27 |
β-Ge2As2 | 3.831 | 2.483 | 2.490 | AB | P-3m1 (No. 164) | 1.01(indirect)27 |
α-Ge2As2 | 3.800 | 2.539 | 2.479 | AA | P6m2(No. 187) | 1.08(indirect) |
β-Ge2As2 | 3.815 | 2.416 | 2.410 | AB | P-3m1(No. 164) | 0.92(indirect) |
α-Ge2P2 | 3.660 | 2.507 | 2.370 | AA | P6m2(No. 187) | 1.33(indirect)27 |
β-Ge2P2 | 3.672 | 2.490 | 2.373 | AB | P-3m1 (No. 164) | 1.19(indirect)27 |
α-Ge2P2 | 3.651 | 2.497 | 2.362 | AA | P6m2(No. 187) | 1.14(indirect) |
β-Ge2P2 | 3.661 | 2.480 | 2.365 | AB | P-3m1 (No. 164) | 0.94(indirect) |
α-Ge2N2 | 3.095 | 2.600 | 1.909 | AA | P6m2(No. 187) | 1.21(indirect)27 |
β-Ge2N2 | 3.100 | 2.544 | 1.909 | AB | P-3m1 (No. 164) | 1.12(indirect)27 |
α-Ge2N2 | 3.104 | 2.551 | 1.915 | AA | P6m2(No. 187) | 1.14(indirect) |
β-Ge2N2 | 3.116 | 2.533 | 1.918 | AB | P-3m1 (No. 164) | 0.94(indirect) |
