Table 1 Various designs for TCAD forming the dataset in the work.
From: Interpreting artificial neural network-based modeling of 4 H-SiC mosfets using explainable AI
Parameters | Values | |||||
|---|---|---|---|---|---|---|
Oxide thickness (TOX) (µm) | 0.01 | 0.02 | 0.03 | 0.04 | 0.05 | 0.06 |
Channel length (Lch) | 2 | 4 | 6 | 8 | 10 | |
p-well concentration (Pconc) (1016 cm-3) | 1 | 2 | 3 | 4 | 5 | |
N- drift concentration (ndrift, conc) (1015 cm-3) | 2 | 4 | 6 | 8 | ||
N+ substrate concentration (nsub, conc) (1018 cm-3) | 1 | 3 | 5 | 7 | 9 | |
