Table 4 Overview of ML applications in TCAD-based device modeling.

From: Interpreting artificial neural network-based modeling of 4 H-SiC mosfets using explainable AI

Reference number

Method

Purpose

Interpretation

4

GNN

To bridge TCAD simulations and AI techniques for improving semiconductor device design efficiency

No

5

DNN

To accelerate FeFET reliability analysis and reduce computation time compared to conventional TCAD

No

6

CNN

To predict two-dimensional physical quantity distributions for device simulation acceleration

No

7

ANN

To model and predict characteristics of GaN-on-Si power devices

No

This work

ANN

Develop a model to accurately capture and predict nonlinear relationships in semiconductor device behavior

Yes

Back to article page