Abstract
We reported vertically-stacking architecture of Si-Si3N4 embedded Ge quantum dots (QDs) array for quantum nanophotonics. Salient features of ordered, stacking Ge QDs lie in good control over the QD size, spherical-shape, and spatial location without relying on lithographic definition. Mie-mediated interaction of Ge QDs with Si nanolayers is characterized by edge enhanced Raman scattering (EERS) of Si and photoluminescence of Ge QDs at the visible−near infrared bands. Ge QDs PIN diodes with 40 nm-wide intrinsic region showcase high gain× bandwidth > 107 GHz A/A at zero bias for self-powered, energy-efficient photodetection.
Data availability
The datasets used and analyzed during the current study available from the corresponding author on reasonable request.
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Funding
This work was financially supported by Honghai Research Institute, MA-tek, and National Science and Technology Council, Taiwan 114UA90042, 114-2119-M-A49-005, 113-2927-I-A49-503 and 112-2221-E-A49-162-MY3. MIA acknowledges projects CEX2023-001263-S and PID2022-141956NB-I00 of MICIU (Spain), as well as the CSIC (Spain)-NSTC (Taiwan) collaboration BILTW22002.
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Y.S.H. conducted the fabrication and COMSOL simulation of stacking Ge-QDs array and Ge QDs P-I-N photodetector. M.I.A conducted µ-Raman measurement, data analysis and manuscript preparation. L.H.C. contributed to data analysis. L.P.W. conceived the study, supervised the work, and contributed to data analysis and manuscript preparation. All authors read and approved the final manuscript.
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Yang, SH., Alonso, M.I., Lin, HC. et al. Mie-mediated edge-enhanced Raman scattering of vertically-stacking ge quantum-dots/Si-SiN array for enhancing photoluminescence and photodetection. Sci Rep (2026). https://doi.org/10.1038/s41598-026-36743-4
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DOI: https://doi.org/10.1038/s41598-026-36743-4
