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Effective control and probe of Néel order in polycrystalline NiO films: a combined approach to study antiferromagnets
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  • Published: 23 January 2026

Effective control and probe of Néel order in polycrystalline NiO films: a combined approach to study antiferromagnets

  • Chun-Chieh Hsu1,
  • Yu-Chen Lin1,
  • I-Yu Cheng1,
  • Shuan-Cheng Mai2,3,
  • Danru Qu3,4,
  • Alexander J. Grutter5,
  • Margaret Kane6,
  • Yuri Suzuki6,7,
  • Yu-Lon Lin1 &
  • …
  • Chao-Yao Yang1,8 

Scientific Reports , Article number:  (2026) Cite this article

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We are providing an unedited version of this manuscript to give early access to its findings. Before final publication, the manuscript will undergo further editing. Please note there may be errors present which affect the content, and all legal disclaimers apply.

Subjects

  • Materials science
  • Nanoscience and technology
  • Physics

Abstract

Antiferromagnetic (AFM) materials are promising for next-generation spintronic applications, however, practical implementation remains challenging due to difficulties in controlling the Néel order and the lack of sensitive, device-compatible readout techniques. In this work, we demonstrate spin Hall magnetoresistance (SHMR) as an effective and versatile approach for probing Néel order, even in polycrystalline AFM films. Using NiO/Pt and LaNiO3/Pt bilayers as model systems, we show that SHMR measurements can detect the Néel temperature (TN), monitor spin-flop transition, and reveal field-induced orientation of the Néel order. Crucially, we establish that the control of Néel order with non-volatility is effective when initiated from the “soft” AFM phase at elevated temperature (380 K) via field-cooling (FC), enabling robust alignment of Néel order without the need for adjacent heavy metals as spin current sources. This spin-current-free control greatly expands the flexibility and scalability of AFM device design, especially in the form of polycrystalline microstructure. The results highlight the combined FC and SHMR technique as a powerful and flexible platform for both manipulation and sensitive readout of AFM states, providing a reliable basis for the design and characterization of a broad class of AFM materials and devices.

Data availability

The authors declare that the main data supporting the findings of this study are available within the article. Extra data are available from the corresponding author upon reasonable request.

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Acknowledgements

This work was supported by the National Science and Technology Council of Taiwan (NSTC) under grant NSTC 114-2124-M-A49-001/114-2221-E-A49 -119 -MY4/113-2124-M-A49-004 and was also supported by the Higher Education Sprout Project and Center for Emergent Functional Matter Science of National Yang Ming Chiao Tung University from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. The authors would like to specially thank the assistance provided by Prof. Chang-Yang Kuo and Dr. Chun-Fu Chang for XMLD-associated measurement at TPS-45A1 NSRRC, Taiwan. Certain commercial equipment, instruments, software, or materials are identified in this paper in order to specify the experimental procedure adequately. Such identifications are not intended to imply recommendation or endorsement by NIST, nor it is intended to imply that the materials or equipment identified are necessarily the best available for the purpose.

Funding

National Science and Technology Council of Taiwan (NSTC): Grant number NSTC 114-2124-M-A49-001/114-2221-E-A49 -119 -MY4/113-2124-M-A49-004.

Author information

Authors and Affiliations

  1. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300093, Taiwan

    Chun-Chieh Hsu, Yu-Chen Lin, I-Yu Cheng, Yu-Lon Lin & Chao-Yao Yang

  2. Department of Physics, National Taiwan University, Taipei, 10617, Taiwan

    Shuan-Cheng Mai

  3. Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwan

    Shuan-Cheng Mai & Danru Qu

  4. Center of Atomic Initiatives for New Materials, National Taiwan University, Taipei, 10617, Taiwan

    Danru Qu

  5. NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA

    Alexander J. Grutter

  6. Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA

    Margaret Kane & Yuri Suzuki

  7. Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA

    Yuri Suzuki

  8. Center for Emergent Functional Matter Science, National Yang Ming Chiao Tung University, Hsinchu, 300093, Taiwan

    Chao-Yao Yang

Authors
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Contributions

CYY conceived the main concept of the study and the experiment. YCL and YLL helped deal with the film growth using sputtering and the device fabrications. CCH dealt with the transport measurements, data analyses, and XMLD experiment with the assistance of IYC. MK helped grow the epitaxial LaNiO 3 for the SHMR characterization. SCM performed the field-dependent MR measurement under the supervision of DQ. CCH organized the paper structure and prepare the draft of the manuscript. CYY, AJG, and YS revised the logic structure and modified readability of the manuscript. All the authors commented on the manuscript.

Corresponding author

Correspondence to Chao-Yao Yang.

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The authors declare no competing interests.

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Supplementary Information

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Hsu, CC., Lin, YC., Cheng, IY. et al. Effective control and probe of Néel order in polycrystalline NiO films: a combined approach to study antiferromagnets. Sci Rep (2026). https://doi.org/10.1038/s41598-026-37152-3

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  • Received: 10 December 2025

  • Accepted: 20 January 2026

  • Published: 23 January 2026

  • DOI: https://doi.org/10.1038/s41598-026-37152-3

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