Fig. 1
From: Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2
a Differential reflection signals, ΔR/R 0, measured at pump fluence of 30 μJ/cm2, for both SiO2/Si and MoSe2/SiO2/Si structures. The black squares represent the extracted signal of pure MoSe2. Inset: sample structure and pump-probe detection geometry. b The extracted signals of pure monolayer MoSe2 at various pump fluences. c Absolute values of the negative peak of signals in Fig. 1b and the fitting with the saturable absorption model (Eq. 1). Inset: Simulation of \(\Delta {{\it{R}}_{{\rm{MoS}}{{\rm{e}}_2}}}/{R_0}\) vs. \({\left( {\Delta \kappa /{\kappa _0}} \right)_{MoS{e_2}}}\), using the transfer matrix method. d Photoluminescence signal of CVD monolayer MoSe2 under 532 nm excitation measured at room-temperature in air
