Fig. 3
From: Highly-stable black phosphorus field-effect transistors with low density of oxide traps
a The Δ\(V_{{\rm{Tn}}}^ + \)(f) and Δ\(V_{{\rm{Tn}}}^ - \)(f) characteristics obtained at T = 95 °C, T = 130 °C and T = 165 °C for V gmin = −20 V and V gmax from 1 to 20 V. While for larger V gmax the number of defects which can emit a hole becomes larger, the distances between the Δ\(V_{{\rm{Tn}}}^ - \)(f) curves are proportional to the concentrations of oxide traps which discharge within the corresponding V g interval. b The Δ\(V_{{\rm{Tp}}}^ + \)(f) and Δ\(V_{{\rm{Tp}}}^ - \)(f) characteristics obtained for the same temperatures using V gmax = 20 V and different V gmin. Since V gmin determines the number of traps which can become charged, we analyze the distances between the Δ\(V_{{\rm{Tp}}}^ + \)(f) curves. However, since for narrow sweep ranges Δ\(V_{{\rm{Tp}}}^ + \) is not accessible, we have to use the Δ\(V_{{\rm{Tn}}}^ + \)(f) curves (inset)
