Fig. 4 | npj 2D Materials and Applications

Fig. 4

From: Highly-stable black phosphorus field-effect transistors with low density of oxide traps

Fig. 4

The differential energy distributions of the oxide trap density D ot(E) for a T = 95 °C, b T = 130 °C and c T = 165 °C; the measurement frequency f is spaced logarithmically between 5 × 10−4 and 1 Hz. At higher temperatures the D ot(E) dependences are more sensitive to the measurement frequency, while the trap density is larger. d The energy distributions of slow oxide traps (f = 5 × 10−4 Hz) obtained for three different temperatures. Due to thermal activation, the effective trap density becomes larger at higher temperatures. e Comparison of typical D ot values for our BPFETs with literature reports for different technologies.33,34,35,36,37,38,39,40

Back to article page