Table 1 Comparison of RF MoS2 FETs performance in literature. The saturation velocity (v sat), calculated from the intrinsic f T, is the highest reported to date for both exfoliated and CVD MoS2 RF systems
MoS2 RF Literature Comparison | |||||||
|---|---|---|---|---|---|---|---|
Device | Configuration (active/substrate/structure) | f T ext/int (GHz) | f max ext/ int (GHz) | Av cut off frequency ext/ int (GHz) | L g(nm) | V d(V) | v sat (×106 cm/s) |
This work | CVD 1L/Si/ embedded gate | 3.3/20 | 9.8/11.4 | 4.6/19.5 | 150 | 3.5 | 1.88 |
[3] | Exf 3L/Si/ top gate | 1.9/14 | –/14 | –/29 | 40 | 2.5 | 0.35 |
[3] | Exf 3L/Si/ top gate with “edge contacts” | 6/25 | –/16 | –/45 | 70 | 2.5 | 1.1 |
[4] | Exf 2–7 nm/Si/ transferred gate | –/42 | –/50 | –/– | 68 | 5 | 1.79 |
[5] | CVD 1L/Si/ top gate | 2.8/6.7 | 3.6/5.3 | 3/11 | 300 | 3.5 | 1.26 |
[6] | CVD 1L/Flex/ top gate | 2.7/5.6 | 2.1/3.3 | –/– | 500 | 2 | 1.76 |
