Fig. 1
From: Moiré-related in-gap states in a twisted MoS2/graphite heterojunction
Two moiré domains. a Large scale STM image (V bias = −0.5 V, I set = 0.5 nA) showing the position of the scanning range for b. b An atomically resolved STM image including two distinct moiré patterns on either side of a boundary (V bias = −0.5 V, I set = 0.5 nA). c Schematic representations of the two domains with rotational angles of 1° for the left side and 14° for the right side. For clarity, here we only draw the S atoms instead of the complete MoS2 structure since only the lower S atoms are at the interface, and they occupy the same projected positions as the atomic peaks in the topography image. The superstructures determined for the left and right regions, each indicated by a black rhombus, are R(37/61) and R(19/31), respectively. d The averaged STS for the left and right regions. (Set point: V bias = −0.5 V, I set = 0.5 nA). The conductivity onset in the conduction band region is located at 0.37 V for R(37/61) and at 0.34 V for R(19/31). In the negative bias range, the peaks appear at −0.27, −0.78, and −1.48 V for R(37/61), and at −0.29, −0.78, and −1.44 V for R(19/31). The tunneling spectra reveal the difference in electronic structure between the R(37/61) and R(19/31) regions
