Fig. 8
From: Reversible hysteresis inversion in MoS2 field effect transistors
Device simulations using experimental intrinsic and oxide trap densities show, a clockwise hysteresis due to intrinsic traps at RT (300 K), b hysteresis collapse at a crossover temperature of 350 K, and, c anti-clockwise hysteresis due to charge exchange between oxide traps and the p+ Si gate, thereby validating the intrinsic-oxide trap model for hysteresis
