Table 2 TMDs: In-plane and out-of-plane macroscopic dielectric constant of monolayer, bilayer and bulk

From: Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

Material

1L (ϵ∞)

1L (ϵ0)

2L (ϵ∞)

2L (ϵ0)

Bulk (ϵ∞)

Bulk (ϵ0)

⊥

||

⊥

||

⊥

||

⊥

||

⊥

||

⊥

||

MoS2(H)

6.1

15.4

6.2

15.5

6.5

15.6

6.6

15.7

6.9

15.8

6.9

15.9

MoSe2(H)

7.2

16.8

7.2

17.4

7.6

17.0

7.7

17.5

8.1

17.2

8.5

17.7

MoTe2(H)

8.9

19.7

9.1

21.6

9.4

19.9

9.8

21.7

10.1

20.1

10.4

21.9

WS2(H)

6.1

14

6.1

14

6.2

14.2

6.2

14.2

6.4

14.4

6.4

14.4

WSe2(H)

7.4

15.3

7.4

15.6

7.5

15.5

7.6

15.7

7.7

15.6

7.8

15.9

HfS2(T)

5.6

10.2

6.6

53.6

5.6

10.2

6.3

51.3

5.8

10.4

6.5

48.9

HfSe2(T)

6.7

13.9

7.6

83.0

6.9

13.9

7.7

77.0

7.2

13.9

7.8

71.2

ZrS2(T)

5.7

11.2

6.8

66.7

5.9

11.3

6.9

61.3

6.2

11.4

7.0

65.3

  1. Out-of-plane (ϵ⊥) and in-plane (ϵ||) dielectric constant (relative permittivity) for monolayer (1L), bilayer (2L) and bulk 2D materials. ϵ∞ represents the electronic contribution of the dielectric response i.e., the dielectric constant at optical frequency. ϵ0 represents the static dielectric constant, which includes both the electronic and the ionic response
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