Fig. 6 | npj 2D Materials and Applications

Fig. 6

From: An atom-to-circuit modeling approach to all-2D metal–insulator–semiconductor field-effect transistors

Fig. 6

a Circuit diagram for a resistive load inverter, designed using the graphene-hBN-hBN-MoS2 vdWH based MISFET. RL is the load resistor and CL is external capacitive load at output. b DC transfer characteristics of the logic inverter, indicating a positive shift of the threshold voltage of the inverter circuit with decreasing d1. It also depicts the DC characteristics of the inverters designed with MISFETs featuring n and p-doped MoS2 monolayers. For n-type doping the threshold voltage decreases, whereas the opposite happens for p-type doping. c Output frequency waveform of a 15-stage ring oscillator, designed with these inverters. It shows the change in output frequency as a result of varying d1 from its equilibrium value and also as a result of doping in MoS2. Here f0=5.75 MHz. The legend convention is same as that of b. d A schematic view of the basic philosophy behind the proposed model which reveals that, the model (i.e. AMS module) works as a bridge between first principles-based material modeling tools and industry standard circuit simulators

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