Table 3 Area under EDD (Å−2)

From: An atom-to-circuit modeling approach to all-2D metal–insulator–semiconductor field-effect transistors

d1 (Å)

hBN-MoS2 Interface (×10−5)

G-hBN Interface (×10−5)

3.0

0.71

1.77

3.2

0.72

1.19

3.4

0.72

1.18

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