Fig. 1 | npj 2D Materials and Applications

Fig. 1

From: Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides

Fig. 1

Materials characteristics and device schematic views. a Optical microscopic (OM) image of our JFET device fabricated on 285-nm-thick SiO2/p-Si wafer. Red and blue dashed lines outline MoS2 and MoTe2 flake area, respectively. Scale bar = 5 μm. b Raman spectra obtained from red dot point of the overlapped region. c 3D schematic view of our MoS2 and MoTe2 junction device. Four heterojunction PN diode pairs can basically be formed (supporting information, Fig. S1) d 3D cross sectional views of p-MoTe2 channel (n-MoS2 gate) and n-MoS2 channel (p-MoTe2 gate) JFET devices

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