Fig. 3

n-channel of p-MoTe2/n-MoS2 JFET. a OM image of n-channel JFET. Scale bar = 10 μm. b Simple 3D schematic of our n-channel JFET. c 2D cross-section device views according to (i) small, (ii) pinch-off, and (iii) large VDS as sectioned along with the white dashed line in b of our n-channel device. d ID–VDS output characteristics of n-channel JFET. e ID–VGS transfer characteristics of n-channel JFET. f Mobility of our n-channel JFET. Red and orange lines indicate the saturation mobility and black stars indicate the linear mobility at different VGS (0.2, 0.4, 0.6, 0.8 V, respectively)