Table 2 Formation energy (EF, eV per formula unit) and band gap (EG, eV) of layered 1T and 3R structures of PtX2 (X = S, Se, Te)

From: Thickness dependent electronic properties of Pt dichalcogenides

Chalcogen (X)

1

2

3

4

5

6

8

10

1T

3R

1T

3R

1T

3R

1T

3R

1T

3R

1T

3R

1T

3R

1T

3R

S

EF

−5.24

−5.24

−5.29

−5.28

−5.31

−5.29

−5.31

−5.3

−5.32

−5.31

−5.32

−5.31

−5.33

−5.31

−5.33

−5.31

EG

1.68

1.68

0.82

1.22

0.67

1.12

0.55

1.06

0.47

1.02

0.41

1

0.34

0.97

0.3

0.95

Se

EF

−4.88

−4.88

−4.94

−4.94

−4.96

−4.95

−4.98

−4.96

−4.98

−4.96

−4.99

−4.965

−4.99

−4.97

−5

−4.97

EG

1.18

1.18

0.21

0.65

−0.08

0.47

−0.29

0.36

−0.43

0.29

−0.53

0.25

−0.64

0.2

−0.71

0.18

Te

EF

−4.65

−4.65

−4.73

−4.71

−4.76

−4.73

−4.77

−4.75

−4.78

−4.75

−4.79

−4.756

−4.8

−4.76

−4.8

−4.77

EG

0.4

0.4

−0.51

−0.34

−0.94

−0.67

−1.06

−0.94

−1.06

−1.07

−1.09

−1.13

−1.17

−1.22

−1.19

−1.28

  1. Negative band gap means semimetal