Table 2 Formation energy (EF, eV per formula unit) and band gap (EG, eV) of layered 1T and 3R structures of PtX2 (X = S, Se, Te)
From: Thickness dependent electronic properties of Pt dichalcogenides
Chalcogen (X) | 1 | 2 | 3 | 4 | 5 | 6 | 8 | 10 | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1T | 3R | 1T | 3R | 1T | 3R | 1T | 3R | 1T | 3R | 1T | 3R | 1T | 3R | 1T | 3R | ||
S | EF | −5.24 | −5.24 | −5.29 | −5.28 | −5.31 | −5.29 | −5.31 | −5.3 | −5.32 | −5.31 | −5.32 | −5.31 | −5.33 | −5.31 | −5.33 | −5.31 |
EG | 1.68 | 1.68 | 0.82 | 1.22 | 0.67 | 1.12 | 0.55 | 1.06 | 0.47 | 1.02 | 0.41 | 1 | 0.34 | 0.97 | 0.3 | 0.95 | |
Se | EF | −4.88 | −4.88 | −4.94 | −4.94 | −4.96 | −4.95 | −4.98 | −4.96 | −4.98 | −4.96 | −4.99 | −4.965 | −4.99 | −4.97 | −5 | −4.97 |
EG | 1.18 | 1.18 | 0.21 | 0.65 | −0.08 | 0.47 | −0.29 | 0.36 | −0.43 | 0.29 | −0.53 | 0.25 | −0.64 | 0.2 | −0.71 | 0.18 | |
Te | EF | −4.65 | −4.65 | −4.73 | −4.71 | −4.76 | −4.73 | −4.77 | −4.75 | −4.78 | −4.75 | −4.79 | −4.756 | −4.8 | −4.76 | −4.8 | −4.77 |
EG | 0.4 | 0.4 | −0.51 | −0.34 | −0.94 | −0.67 | −1.06 | −0.94 | −1.06 | −1.07 | −1.09 | −1.13 | −1.17 | −1.22 | −1.19 | −1.28 | |