Fig. 1
From: Raman detection of hidden phonons assisted by atomic point defects in a two-dimensional semimetal
Topology of a typical ZrSiTe flake on a 285 nm SiO2/Si substrate. a The optical (the inset of a) and AFM images of a ZrSiTe flake on a 285 nm SiO2/Si substrate. The length of the scale bar is 1 μm. The variation of the thickness can be identified layer-by-layer both in optical and AFM topography images. b Crystalline structure of ZrSiTe. The cleavage plane between adjacent Te layers is indicated by an arrow. The line profile shown in c and d indicates the height profile along the blue and red solid line, respectively. The dashed lines indicate the average height of the corresponding plane of the layers. The thickness of a single layer can be estimated to be 1.3 nm from these line profiles
