Fig. 3
From: Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
Simulated (solid line) and measured (symbols) RF performance of the MoS2-based FET described in Table 1 (Vgs = 4.4 V; Vds = 3.5 V). The device shows a cut-off frequency fT = 20.2 GHz and a maximum oscillation frequency fmax = 11.3 GHz.
