Fig. 6
From: Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

Three-stage ring oscillator switching at a frequency around 1 GHz based on the 2DFETs described in Table 1. The supply bias is 3.5 V.
From: Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

Three-stage ring oscillator switching at a frequency around 1 GHz based on the 2DFETs described in Table 1. The supply bias is 3.5 V.