Table 1 Input parameters of the 2DFET under test.

From: Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

L

150 nm

µ0

21.2 cm2/Vs

W

10 µm

mK 26

0.48m0

Lt

10 nm

mQ 26

0.57m0

Lb

285 nm

m0

9.11 × 10−31 kg

εt

9

gK27

2

εb

3.9

gQ27

6

Vg0

0.42 V

ΔE218

0.11 eV

Vb0

0 V

Nit

1.8 × 1016 m−2

T

300 K

Vit

0.085 eV