Fig. 2: Electrical properties of the InSe transistors embedded with oxidized-monolayer.
From: Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors
a A schematic of the InSe device structure at the contact regime shows a surface oxidation layer embedded in between the contact metal and InSe. b The output curves of InSe devices utilizing UV–ozone processing temperatures of 80, 90, and 100 °C for a duration of 10 s. The Vgs = 80 V, and the measured T = 2 K. Inset: (upper left) An OM image of a typical InSe device. The scale bar is 10 μm. (Lower right) The output curve for the InSe device utilizing a UV–ozone temperature of 80 °C for 10 s, and the fitting curve calculated by Simmons’ model. The gray line is a linear extrapolation of the output curve from the low-voltage regime.
