Fig. 3: Fermi-level depinning in the InSe transistors with the OML-embedded tunneling contact.
From: Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors
a The SBH as a function of metal WF for the OML-embedded InSe devices and the control samples. The InSe devices with the OML-embedded tunneling contact manifest a large pinning factor of S = 0.5, indicating a pronounced FL depinning. The gray line shows the Schottky-Mott rule in the case of no FL pinning effect. Schematics of energy band diagrams at the metal/InSe interfaces show b the MIGS resulting from the decaying metal wave function tailing into InSe, and c the DIGS resulting from defect states. With the insertion the OML, the tunneling barrier can facilitate d attenuation of the gap states resulting from the penetrated metal wave functions, and e mitigation of the DIGS in metal/InSe interfaces. The ϕCNL is estimated to be 5.2 eV and 4.9 eV with and without the OML, respectively.
