Fig. 4: Tunable transport characteristics controlled by the work function of the contact metal.
From: Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors
a Semilogarithmic output curves for the InSe devices with In metal contacts at T = 2 K and Vgs = 80 V. The Ids of InSe devices with the OML (orange line) is threefold larger than that of InSe devices without the OML (light orange line), indicating a reduced SBH. Semilogarithmic output curves for the InSe devices with Pd metal contacts at T = 2 K and Vgs = 80 V. The InSe device with the OML (green line) exhibits a decreased Ids compared to that of the control sample (light green line). b The transfer curves of the InSe devices at T = 2 K with the OML (In contact: orange line; Pd contact: green line) and without the OML (In contact: light orange line; Pd contact: light green line). The applied source-drain voltage is 1 V. The changes in Vth and Ids can be explained by the integration of the OML, further supporting the FL depinning in the InSe devices with the tunneling contact.
