Fig. 5: Transport properties of the InSe transistors with the OML-embedded tunneling contact.
From: Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors
Comparisons of the a transfer characteristics and b two-terminal field-effect mobilities (μFE) of the InSe devices with and without the OML-embedded tunneling contact. Inset: Semilogarithmic transfer characteristics of an InSe device with the OML, showing an ideal transistor behavior. The InSe transistor with the OML-embedded tunneling contact exhibits a high two-terminal μFE of 2160 cm2/Vs and a large on/off ratio of 108 at T = 2 K. The source-drain voltage is 1 V. c A comparison of the surface trap densities of the InSe devices with and without the OML. The activation energies, EA, of the InSe devices with and without the OML are extracted to be 57 and 14 meV, respectively.
