Fig. 5: PLDOS of TiS2–MoS2(ML) FET-like junctions doped with different doping concentrations and the variation of band structure at interface B. | npj 2D Materials and Applications

Fig. 5: PLDOS of TiS2–MoS2(ML) FET-like junctions doped with different doping concentrations and the variation of band structure at interface B.

From: Titanium disulfide as Schottky/ohmic contact for monolayer molybdenum disulfide

Fig. 5

a–d The doping concentrations are: N = 5 × 1019 cm−3, N = 1 × 1019 cm−3, N = 5 × 1018 cm−3, and P = 5 × 1018 cm−3. The thickness of TiS2 is four layers. On the right-side, the plot shows the variation of band structure under different doping concentrations. The scale bar is from 0.0 to 90.0 (1/eV).

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