Fig. 9: Strain engineering in 2D materials.
From: Bandgap engineering of two-dimensional semiconductor materials
a Bandgap tuning in uniaxially207 (top) and biaxially (bottom)212 strained monolayer MoS2. b Superlattice built by introducing a local and periodic strain in a monolayer MoS2 by patterning nanocones in the substrates221. c Exciton funneling and inverse funneling effect in 2D semiconductors201. The bottom panels show an experimental realization of inverse funneling in a locally strained HfS2 photodetector225. Panel a reprinted with permission from207 Nano Lett. 2013, 13, 8, 3626–3630. Publication Date: July 2, 2013 https://doi.org/10.1021/nl4014748 Copyright (2013) American Chemical Society; b reused from Springer Nature/Li et al.221, permissible under a CC-BY [4.0/3.0] license; c reused with permission from APS/San Jose et al.201, and Springer Nature/Sanctis et al.225, permissible under a CC-BY [4.0/3.0] license.
