Fig. 1: Atomic structures and phase transition diagram for 2D GaN-based semiconductors.
From: Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors

a Structural prototypes of wurtzite, 4 | 8, and hexagonal structures. The hexagonal ring in the wurtzite structure and the 4 | 8 ring in the haeckelite structure are marked by gray and yellow shadows. b Free energy per formula unit as a function of the number of layers for wurtzite (black) and 4 | 8 (red) AlN, GaN, and InN slabs. c Scheme of the phase evolution with the number of layers.