Fig. 2: Internal electrostatic potentials and the charge distributions for 2D GaN-based semiconductors in different configurations.
From: Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors
a Planar-average (black line) and macroscopic-average (red line) internal electrostatic potentials along the c-axis for 4 | 8, hexagonal, and wurtzite ten-layer slabs. The dangling bonds in 4 | 8 and wurtzite on the surfaces are passivated by hydrogen atoms. b Scheme of charge distribution along the c-axis for 4 | 8, hexagonal, and wurtzite configurations.
