Fig. 6: Structures of four-layer wurtzite and 4 | 8-GaN on a graphene or SiC substrate. | npj 2D Materials and Applications

Fig. 6: Structures of four-layer wurtzite and 4 | 8-GaN on a graphene or SiC substrate.

From: Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors

Fig. 6

a 4 | 8-GaN on graphene, b w-GaN on graphene, c 4 | 8-GaN on SiC, and d w-GaN on SiC. The top row shows the initial structures; the middle row shows the optimized structures with charge difference contours, where the isosurface is set to 1.5 × 10−3 e bohr−3; and the bottom row shows the snapshots after AIMD simulations at 1000 K.

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