Table 1 Lattice parameters and band gaps for different phases of group-III nitrides.
From: Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors
Structures | Lattice parameters (Å) | Band gap (eV) | ||
|---|---|---|---|---|
a | c | PBE | HSE06 | |
w-AlN | 3.11 | 4.99 | 4.17 | 5.98 |
w-GaN | 3.19 | 5.21 | 1.86 | 3.24 |
w-InN | 3.54 | 5.69 | Semi-metal | 0.69 |
4 | 8-AlN | 3.11 | 5.30 | 3.85 | 5.57 |
4 | 8-GaN | 3.20 | 5.50 | 1.86 | 3.24 |
4 | 8-InN | 3.56 | 6.02 | Semi-metal | 0.76 |
h-AlN | 3.12 | 2.91 | 4.32 | |
h-GaN | 3.20 | 2.20 | 3.53 | |
h-InN | 3.57 | 0.63 | 1.72 | |
